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Hot sale Original STB42N60M2-EP Transistors MOSFET N-Channel 600 V 34A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer Product Number
STB42N60M2-EP
Description
STB42N60M2-EP N-Channel 600V 34A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Datasheet
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Product Details
| Description These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Features • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Applications • Switching applications |
Product Description
| Type# | Description |
| ANSC PART# | ANSC - STB42N60M2-EP |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | / |
| Series | MDmesh™ M2-EP |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 2370 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | STB42 |
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STB42N60M2-EP N-Channel 600V 34A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
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