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Hot-selling and scarce SMMUN2214LT1G NPN Transistors with Monolithic Bias Resistor Network SOT-23-3 spot stock
SMMUN2214LT1G NPN Transistors with Monolithic Bias Resistor Network SOT-23-3 spot stock
Product Descriptions
This series of digital transistors is designed to replace a singledevice and its external resistor bias network . The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasnetwork consisting of two resistors; a series base resistor and abase−emitter resistor . The BRT eliminates these individualcomponents by integrating them into a single device .The use of a BRTcan reduce both system cost and board space.
Product Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb−Free,Halogen Free/BFR Free and are RoHS Compliant
Product Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-SMMUN2214LT1G |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel® | |
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistors Included | R1 and R2 |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 246 mW |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMUN2214 |
Product Photos

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