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Hot sale Original BSS138-7-F Transistor MOSFET N-CH 50V 200MA N-Channel 50 V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3

Manufacturer
Manufacturer Product Number
BSS138-7-F
Description

Original BSS138-7-F Transistor MOSFET N-CH 50V 200MA N-Channel 50 V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3

Package Condition
Tape & Reel (TR) Cut Tape (CT)

 

Product Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 200mA.With a drain-source breakdown voltage of 50V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 50V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 20 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.1.2V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

Product Features  


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns
a threshold voltage of 1.2V

Product Applications

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

Product Description

Type
Description
ANSC PART#
 ANSC - BSS138-7-F
Category
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr
-
Series
-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
300mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
BSS138

 

  Actual image of the product                

 

 BSS138-7-F (2)

Product datasheet

For more information, please download

BSS138-7-FBSS138-7-F 2BSS138-7-F 3BSS138-7-F 3-1

Payment&Transportation

8

Official Certificate&Certificate

3.1

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Hot sale Original BSS138-7-F Transistor MOSFET N-CH 50V 200MA N-Channel 50 V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3

Original BSS138-7-F Transistor MOSFET N-CH 50V 200MA N-Channel 50 V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3

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