Hot sale Original JAN2N2920 NPN TRANSISTOR Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6

ANSC PART#

ANSC - JAN2N2920

Category

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays

Manufacturer

Original

Series

-

Packaging

Bulk

Part Status

Active

Transistor Type

2 NPN (Dual)

Current - Collector (Ic) (Max)

30mA

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

300mV @ 100µA, 1mA

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

300 @ 1mA, 5V

Power - Max

350mW

Frequency - Transition

-

Operating Temperature

-65°C ~ 200°C (TJ)

Grade

Military

Qualification

MIL-PRF-19500/355

Mounting Type

Through Hole

Package / Case

TO-78-6 Metal Can

Supplier Device Package

TO-78-6

Base Product Number

2N2920