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JAN2N2920 NPN TRANSISTOR Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6
NPN TRANSISTOR Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6
Product Description
ANSC PART# |
ANSC- JAN2N2920 |
Part# |
JAN2N2920 |
Type: |
Transistors |
Manufactor |
Microchip Technology |
DC |
new |
Product Attributes
TYPE |
DESCRIPTION |
---|---|
Category |
Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays |
Manufacturer |
Microchip Technology |
Series |
- |
Packaging |
Bulk |
Part Status |
Active |
Transistor Type |
2 NPN (Dual) |
Current - Collector (Ic) (Max) |
30mA |
Voltage - Collector Emitter Breakdown (Max) |
60V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max) |
10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
300 @ 1mA, 5V |
Power - Max |
350mW |
Frequency - Transition |
- |
Operating Temperature |
-65°C ~ 200°C (TJ) |
Grade |
Military |
Qualification |
MIL-PRF-19500/355 |
Mounting Type |
Through Hole |
Package / Case |
TO-78-6 Metal Can |
Supplier Device Package |
TO-78-6 |
Base Product Number |
2N2920 |
Actual image of the product
Product datasheet
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