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Hot sale Original MTB3N100E Power Field-Effect Transistors 3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET
Manufacturer Product Number
MTB3N100E
Description
MTB3N100E Power Field-Effect Transistors 3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET
Package Condition
Original
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Product Details
| The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Robust High Voltage Termination • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation • Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number |
Product Description
| Type# | Description |
| ANSC PART# | ANSC- MTB3N100E |
| Ihs Manufacturer | Original |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 1000 V |
| Drain Current-Max (ID) | 3 A |
| Drain-source On Resistance-Max | 4 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 235 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 125 W |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Element Material | SILICON |
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MTB3N100E Power Field-Effect Transistors 3A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET
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