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Hot sale original electronics RFM10N12 N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS GE Solid State
Manufacturer Product Number
RFM10N12
Description
RFM10N12 Power Field-Effect Transistor, 10A I(D), 120V, 0.3ohm, 1-Element, N-Channel, Silicon
Package Condition
Original
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Product Description
| Type | Description |
| ANSC PART# | RFM10N12 |
| Ihs Manufacturer | Original |
| Package Description | FLANGE MOUNT, O-MBFM-P2 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 120 V |
| Drain Current-Max (ID) | 10 A |
| Drain-source On Resistance-Max | 0.3 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 100 pF |
| JEDEC-95 Code | TO-204AA |
| JESD-30 Code | O-MBFM-P2 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C |
| Package Body Material | METAL |
| Package Shape | ROUND |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 75 W |
| Power Dissipation-Max (Abs) | 75 W |
| Pulsed Drain Current-Max (IDM) | 25 A |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | TIN LEAD |
| Terminal Form | PIN/PEG |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 270 ns |
| Turn-on Time-Max (ton) | 310 ns |
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RFM10N12 Power Field-Effect Transistor, 10A I(D), 120V, 0.3ohm, 1-Element, N-Channel, Silicon
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