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Original IRF5803TRPBF Power Field-Effect Transistors MOSFET P-CH MICRO6 P-Channel 40 V 3.4A (Ta) Surface Mount

Manufacturer
Manufacturer Product Number
IRF5803TRPBF
Description

IRF5803TRPBF Transistors / Power Field-Effect Transistors MOSFET P-CH 40V 3.4A MICRO6 P-Channel 40 V 3.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)

Package Condition
Tape & Reel (TR) Cut Tape (CT)

Product Details

IRF5803TRPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1110pF @ 25V.This device conducts a continuous drain current (ID) of -3.4A, which is the maximum continuous current transistor can conduct.Using VGS=-40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 88 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 43 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

IRF5803TRPBF Features


a continuous drain current (ID) of -3.4A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 88 ns
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)


IRF5803TRPBF Applications


There are a lot of Infineon Technologies
IRF5803TRPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

Product Description

ANSC PART#

 ANSC- IRF5803TRPBF

Part#

IRF5803TRPBF

Type:

Electronic components

Manufactor

Infineon Technologies

DC

new

Actual image of the product                

27473.jpg

TYPE
DESCRIPTION
Category
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr
Infineon Technologies
Series
HEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Part Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
112mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1110 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro6™(TSOP-6)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
IRF5803

Product datasheet

For more information, please download

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Original IRF5803TRPBF Power Field-Effect Transistors MOSFET P-CH MICRO6 P-Channel 40 V 3.4A (Ta) Surface Mount

IRF5803TRPBF Transistors / Power Field-Effect Transistors MOSFET P-CH 40V 3.4A MICRO6 P-Channel 40 V 3.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)

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