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Origina Transistors STP12NM50 MOSFET N-CH 500V 12A TO220AB N-Channel 500 V 12A (Tc) 160W (Tc) Through Hole TO-220
Manufacturer
Manufacturer Product Number
STP12NM50
Description
Transistors STP12NM50 MOSFET N-CH 500V 12A TO220AB N-Channel 500 V 12A (Tc) 160W (Tc) Through Hole TO-220
Package Condition
Tube
Product Details
Description
The MDmesh™ is a new revolutionary Power MOSFET technology that associates
the multiple drain process with the company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics.
The adoption of the Company’s proprietary strip technique yields overall dynamic
performance that is significantly better than that of similar competition’s products.
All features
-
High dv/dt and avalanche capabilities
-
100% avalanche tested
-
Low input capacitance and gate charge
-
Tight process control and high manufacturing yields
-
Low gate input resistance
Product Description
|
TYPE |
DESCRIPTION |
|---|---|
| ANSC PART# | ANSC - STP12NM50 |
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
STMicroelectronics |
|
Series |
MDmesh™ |
|
Packaging |
Tube |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
500 V |
|
Current - Continuous Drain (Id) @ 25°C |
12A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
350mOhm @ 6A, 10V |
|
Vgs(th) (Max) @ Id |
5V @ 50µA |
|
Gate Charge (Qg) (Max) @ Vgs |
39 nC @ 10 V |
|
Vgs (Max) |
±30V |
|
Input Capacitance (Ciss) (Max) @ Vds |
1000 pF @ 25 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
160W (Tc) |
|
Operating Temperature |
-65°C ~ 150°C (TJ) |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-220 |
|
Package / Case |
TO-220-3 |
|
Base Product Number |
STP12 |
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Product datasheet
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Transistors STP12NM50 MOSFET N-CH 500V 12A TO220AB N-Channel 500 V 12A (Tc) 160W (Tc) Through Hole TO-220
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