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Original FGH60N60SMD IGBT FIELD STOP 600V 120A TO247 IGBT Field Stop 600 V 120 A 600 W Through Hole TO-247-3

Manufacturer

Manufacturer Product Number

FGH60N60SMD

Description

FGH60N60SMD IGBT FIELD STOP 600V 120A TO247 IGBT Field Stop 600 V 120 A 600 W Through Hole TO-247-3

Package Condition

Tube

Product Details
Reviews

Product Details

Description

Using novel field stop IGBT technology, ON Semiconductor’s new

series of field stop 2nd generation IGBTs offer the optimum

performance for solar inverter, UPS, welder, telecom, ESS and PFC

applications where low conduction and switching losses are essential.

Features

• Maximum Junction Temperature: TJ = 175°C

• Positive Temperature Co−efficient for easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A

• High Input Impedance

• Fast Switching: EOFF = 7.5 uJ/A

• Tightened Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, PFC, Telecom, ESS

Product Description

ANSC PART#

ANSC- FGH60N60SMD

Part#

FGH60N60SMD

Type：

Transistors

Manufactor

Original

new

Actual image of the product

TYPE	DESCRIPTION
Category	Discrete Semiconductor Products Transistors IGBTs Single IGBTs
Manufacturer	onsemi
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	180 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 60A
Power - Max	600 W
Switching Energy	1.26mJ (on), 450µJ (off)
Input Type	Standard
Gate Charge	189 nC
Td (on/off) @ 25°C	18ns/104ns
Test Condition	400V, 60A, 3Ohm, 15V
Reverse Recovery Time (trr)	39 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3
Base Product Number	FGH60

Product datasheet

For more information, please download

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