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Original NDT014 Transistors MOSFETs N-Channel Enhancement Mode Field Effect Transistor 60V, 2.7A, 0.2Ω
NDT014 transistor MOSFET N-CH 60V 2.7A SOT-223-4 Surface mount N-channel 60 V 2.7A(Ta) 3W(Ta) SOT-223-4
Product Details
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V.
■ High density cell design for extremely low RDS(ON).
■ High power and current handling capability in a widely used surface mount package.
Product Description
ANSC PART# |
ANSC- NDT014 |
Part# |
NDT014 |
Type: |
Transistors |
Manufactor |
Original |
DC |
new |
Actual image of the product
TYPE |
DESCRIPTION |
---|---|
category |
Discrete semiconductor products transistor FET,MOSFET Single FET, MOSFET |
manufacturer |
onsemi |
series |
- |
wrap |
Tape & Reel (TR) Cut Tape (CT)l |
Part status |
Sale |
FET type |
N-channel |
technology |
MOSFETs (Metal Oxides) |
Drain-to-source voltage (Vdss) |
60 V |
Current at 25°C - Continuous Drain (Id) |
2.7A(Ta) |
Drive voltage (max. Rds On, min. Rds On) |
10V |
On-resistance (max.) at different IDs, Vgs |
200 mOhm @ 1.6A, 10V |
Vgs(th) with different IDs (max) |
4V @ 250µA |
Gate charge (Qg) at different Vgs (max) |
11 nC @ 10 V |
VGS (Max) |
±20V |
Input Capacitance (Ciss) at Different VDS (Max) |
155 pF @ 25 V |
FET function |
- |
Power Dissipation (Max) |
3W(Ta) |
Operating temperature |
-65°C ~ 150°C(TJ) |
Installation type |
Surface mount type |
Supplier device package |
SOT-223-4 |
Package/Case |
TO-261-4,TO-261AA |
Basic product number |
NDT014 |
Product datasheet
For more information, please download
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