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Hot sale Original FS10KM-12 Power Field-Effect Transistor 10A I(D) 600V 0.94ohm 1-Element N-Channel Silicon Metal-oxide

Manufacturer Product Number
FS10KM-12
Description

FS10KM-12 Power Field-Effect Transistor 10A I(D) 600V 0.94ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET

Package Condition
Original
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Product Details

HIGH-SPEED SWITCHING USE

● VDSS ................................................................................ 600V
● rDS (ON) (MAX) .............................................................. 0.94Ω
● ID ..........................................................................................10A
● Viso ................................................................................ 2000V
APPLICATION
SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.


Product Description


TypeDescription
ANSC PART#ANSC- FS10KM-12
Ihs ManufacturerOriginal
Package DescriptionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN CodeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min600 V
Drain Current-Max (ID)10 A
Drain-source On Resistance-Max0.94 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 CodeR-PSFM-T3
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 °C
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)40 W
Pulsed Drain Current-Max (IDM)30 A
Qualification StatusNot Qualified
Surface MountNO
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON


Actual image of the product 

FS10KM-12

Product datasheet 

For more information, please download

   

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详情8

Official Certificate&Certificate

2

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Hot sale Original FS10KM-12 Power Field-Effect Transistor 10A I(D) 600V 0.94ohm 1-Element N-Channel Silicon Metal-oxide

FS10KM-12 Power Field-Effect Transistor 10A I(D) 600V 0.94ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET

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