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Exact specifications should be obtained from the product data sheet.

Hot sale original BSS123,215 Small Signal Field-Effect Transistor N-channel TrenchMOS logic level FET TO-236 3-Pin

Manufacturer Product Number
BSS123,215
Description

BSS123,215 Small Signal Field-Effect Transistor N-channel TrenchMOS logic level FET TO-236 3-Pin

Package Condition
Tape & Reel (TR) Cut Tape (CT)
Datasheet
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Product Details

BSS123,215 Overview

To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).

BSS123,215 Features

a 100V drain to source voltage (Vdss)

BSS123,215 Applications

BSS123,215 applications of single MOSFETs transistors.

Power Tools

Motor Drives and Uninterruptible Power Supples

Synchronous Rectification

Battery Protection Circuit

Telecom 1 Sever Power Supplies

Industrial Power Supplies

PFC stages, hard switching PWM stages and resonant switching

PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

Lighting, Server, Telecom and UPS.

DC-to-DC converters

Product Description

Type# Description
ANSC PART# ANSC -BSS123,215
Ihs Manufacturer /
Part Package TO-236
Package Description SOT-23, 3 PIN
Pin Count 3
Manufacturer Package SOT23
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.15 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.25 W
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified
Reference Standard IEC-134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Actual image of the product 

BSS123,215

Product datasheet 

For more information, please download

 

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Official Certificate&Certificate

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Hot sale original BSS123,215 Small Signal Field-Effect Transistor N-channel TrenchMOS logic level FET TO-236 3-Pin

BSS123,215 Small Signal Field-Effect Transistor N-channel TrenchMOS logic level FET TO-236 3-Pin

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