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Hot sale Original 2N2222A TRANS NPN 50V 0.8A Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole TO-18 Transistor
2N2222A Transistors TRANS NPN 50V 0.8A TO-18
Product Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.A 800 continuous collector voltage is necessary to achieve high efficiency.Product comes in the supplier's device package TO-18.There is a 50 V maximal voltage in the device due to collector-emitter breakdown.
Product Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-18
Product Applications
2N2222A applications of single BJT transistors.
-
Inverter
-
Interface
-
Driver
-
Muting
Product Description
|
Type |
Description |
|---|---|
|
ANSC PART# |
ANSC - 2N2222A |
|
category |
Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors |
|
Mfr |
- |
|
Series |
- |
|
Packaging |
Bulk |
|
Part Status |
Active |
|
Transistor Type |
NPN |
|
Current - Collector (Ic) (Max) |
800 mA |
|
Voltage - Collector Emitter Breakdown (Max) |
50 V |
|
Vce Saturation (Max) @ Ib, Ic |
1V @ 50mA, 500mA |
|
Current - Collector Cutoff (Max) |
50nA |
|
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 150mA, 10V |
|
Power - Max |
500 mW |
|
Frequency - Transition |
- |
|
Operating Temperature |
-65°C ~ 200°C (TJ) |
|
Mounting Type |
Through Hole |
|
Package / Case |
TO-206AA, TO-18-3 Metal Can |
|
Supplier Device Package |
TO-18 |
|
Base Product Number |
2N2222 |
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Product datasheet
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