Original JAN2N3762 Transistors TRANS PNP 40V 1.5A TO39 Bipolar (BJT) Transistor PNP 40 V 1.5 A 1 W Through Hole TO-39 (TO-205AD)

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   JAN2N3762 Overview    

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 1A, 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 900mV @ 100mA, 1A.The emitter base voltage can be kept at 5 V for high efficiency.This product comes in a TO-39 (TO-205AD) device package from the supplier.Device displays Collector Emitter Breakdown (40 V maximal voltage).Single BJT transistor is possible to have a collector current as low as 1.5 A volts at Single BJT transistors maximum.

   JAN2N3762 Features       

the DC current gain for this device is 30 @ 1A, 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the emitter base voltage is kept at 5 V
the supplier device package of TO-39 (TO-205AD)

   JAN2N3762 Applications    

There are a lot of Microchip
JAN2N3762 applications of single BJT transistors.

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