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Hot sale Original JAN2N3762 Transistors TRANS PNP 40V 1.5A TO39 Bipolar (BJT) Transistor PNP 40 V 1.5 A 1 W Through Hole
Manufacturer Product Number
JAN2N3762
Description
JAN2N3762 Transistors TRANS PNP 40V 1.5A TO39 Bipolar (BJT) Transistor PNP 40 V 1.5 A 1 W Through Hole TO-39 (TO-205AD)
Package Condition
Bulk
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Product Details
| Brief Description: The JAN2N3762 is a military-grade, single PNP bipolar junction transistor (BJT) manufactured . It is designed for switching applications and has a high power dissipation of 1W. Features: PNP bipolar junction transistor (BJT) with a single collector-emitter configuration High power dissipation of 1W High current capability with a maximum collector current of 1.5A High voltage capability with a collector-base voltage of 40V and a collector-emitter voltage of 40V Operating temperature range of -55°C to 200°C Through-hole mounting with a TO-205AD or TO-39-3 metal can package Non-RoHS compliant with a tin/lead (Sn/Pb) terminal finish Application Grade: The JAN2N3762 is a military-grade component, designed to meet the requirements of MIL-PRF-19500/396. It is suitable for high-reliability applications in the military, aerospace, and industrial sectors. Applications: The JAN2N3762 is suitable for a wide range of applications, including: Switching circuits in military and aerospace systems Power amplifiers and drivers in industrial and commercial equipment High-power switching applications in power supplies and inverters High-voltage switching applications in motor control and power conversion systems Overall, the JAN2N3762 is a high-performance, high-power PNP BJT designed for demanding applications that require high reliability and ruggedness. |
Product Description
| Type# | Description |
| ANSC PART# | ANSC -JAN2N3762 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single Bipolar Transistors | |
| Mfr | / |
| Series | - |
| Packaging | Bulk |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1A, 1.5V |
| Power - Max | 1 W |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/396 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 (TO-205AD) |
| Base Product Number | 2N3762 |
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JAN2N3762 Transistors TRANS PNP 40V 1.5A TO39 Bipolar (BJT) Transistor PNP 40 V 1.5 A 1 W Through Hole TO-39 (TO-205AD)
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