Hot-selling and scarce SST39VF016-90-4C-EI 8 Mbit / 16 Mbit Multi-Purpose Flash TSOP spot stock

Product Descriptions

The SST39LF/VF080 and SST39LF/VF016 devices are1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability   compared   with   alternate   approaches.   The SST39LF080/016 write (Program or Erase)with a 3.0-3.6V power supply. The SST39VF080/016 write (Program or Erase) with a 2.7-3.6V power supply. They conform to JEDEC standard pinouts for x8 memories.

Featuring high performance Byte-Program, the SST39LF/ VF080  and  SST39LF/VF016  devices  provide  a  typical Byte-Program time of 14 µsec.The devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed,manufactured,and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles.  Data retention is rated at greater than 100 years.

The SST39LF/VF080 and SST39LF/VF016 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability,while lowering power consumption.

Product Features

• Organized as 1M x8 / 2M x8

• Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF080/016

– 2.7-3.6V for SST39VF080/016

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 15 mA (typical)

– Standby Current: 4 µA (typical)

– Auto Low Power Mode: 4 µA (typical)

• Sector-Erase Capability

– Uniform 4 KByte sectors

• Block-Erase Capability

– Uniform 64 KByte blocks

• Fast Read Access Time:

– 55 ns for SST39LF080/016

– 70 and 90 ns for SST39VF080/016

• Latched Address and Data

• Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

15 seconds (typical) for SST39LF/VF080

30 seconds (typical) for SST39LF/VF016

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 40-lead TSOP (10mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

Product Photos

For more product information, please download the PDF