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Hot sale original BLF3G21-30 Transistors UHF BAND Si N-CHANNEL RF POWER MOSFET CERAMIC PACKAGE-2 FET RF Power
BLF3G21-30 Transistors UHF BAND Si N-CHANNEL RF POWER MOSFET CERAMIC PACKAGE-2 FET RF Power
Product Details
RF Manual 16th edition
RF products
June 2012
NXP enables you to unleash the performance of next-generation RF and microwave designs
NXPs RF Manual is one of the most important reference tools on the market for today’s RF designers. It features our complete range of RF products, from low- to high-power signal conditioning, organized by application and function, and with a focus on design-in support.
When it comes to RF, the first thing on the designers mind is to meet the specified performance. NXP brings clarity to every aspect of your design challenge, so you can unleash the performance of your RF and microwave designs. NXP delivers a portfolio of high-performance RF technology that allows you to differentiate your product – no matter where in the RF world you are. That’s why customers trust us with their mission-critical designs. Whether it’s LDMOS and GaN for high-power RF applications or Si and SiGe:C BiCMOS for your small-signal needs, we’ve got you covered. Our broad portfolio of far-reaching technologies gives you the freedom to design with confidence.
Product Description
| TYPE# | DESCRIPTION |
| ANSC PART# | ANSC- BLF3G21-30 |
| Manufacturer | / |
| Package Description | CERAMIC PACKAGE-2 |
| Pin Count | 2 |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 65 V |
| Drain Current-Max (ID) | 4.5 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
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