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NCE60P82A TO220 high-voltage P-channel IGBT field-effect transistor
Manufacturer Product Number
NCE60P82A
Description
high-voltage P-channel IGBT field-effect transistor
Package Condition
TUBE
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| Part# | NCE60P82A |
| Type： | high-voltage P-channel IGBT field-effect transistor |
| Manufactor | - |
| DC | NEW |
| Describe | TO-220 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -60 |
| ID(A) | -82 |
| VTH(V) | -1.8 |
| RDS(ON)@10VTyp(mΩ) | 11 |
| RDS(ON)@4.5VTyp(mΩ) | 13 |
| QG(nC) | 62 |
| PD(W) | 150 |
Product Data Book:https://allnewsemi.shop/img/cms/NCE60P82A.pdf
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high-voltage P-channel IGBT field-effect transistor
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