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Hot sale original SI2309CDS-T1-GE3 MOSFET P-CH 60V 1.6A SOT23-3 P-Channel 60 V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount

Manufacturer Product Number
SI2309CDS-T1-GE3
Description

SI2309CDS-T1-GE3 P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Package Condition
Tape & Reel (TR) Cut Tape (CT)
Datasheet
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Product Details

SI2309CDS-T1-GE3 Overview

The maximum input capacitance of this device is 210pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.2A.When VGS=-60V, and ID flows to VDS at -60VVDS, the drain-source breakdown voltage is -60V in this device.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 40 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.

SI2309CDS-T1-GE3 Features

a continuous drain current (ID) of 1.2A

a drain-to-source breakdown voltage of -60V voltage

a threshold voltage of -1V

SI2309CDS-T1-GE3 Applications

SI2309CDS-T1-GE3 applications of single MOSFETs transistors.

Micro Solar Inverter

DC/DC converters

Power Tools

Motor Drives and Uninterruptible Power Supples

Synchronous Rectification

Battery Protection Circuit

Telecom 1 Sever Power Supplies

Industrial Power Supplies

PFC stages, hard switching PWM stages and resonant switching

PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

Product Description

Type# Description
ANSC PART# ANSC -SI2309CDS-T1-GE3
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr /
Series TrenchFET®
Packaging Tape & Reel (TR)
Cut Tape (CT)
/
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number SI2309

Actual image of the product 

SI2309CDS-T1-GE3

Product datasheet 

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Hot sale original SI2309CDS-T1-GE3 MOSFET P-CH 60V 1.6A SOT23-3 P-Channel 60 V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount

SI2309CDS-T1-GE3 P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

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