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Original SI4214DDY-T1-GE3 Transistors MOSFET 2N-CH 30V 8.5A 8SOIC Mosfet Array 30V 8.5A 3.1W Surface Mount
Manufacturer
Manufacturer Product Number
SI4214DDY-T1-GE3
Description
SI4214DDY-T1-GE3 Transistors MOSFET 2N-CH 30V 8.5A 8SOIC Mosfet Array 30V 8.5A 3.1W Surface Mount 8-SOIC
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Product Details
FEATURES
• TrenchFETPower MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• Low Current DC/DC
Product Description
|
ANSC PART# |
ANSC- SI4214DDY-T1-GE3 |
|
Part# |
SI4214DDY-T1-GE3 |
|
Type： |
Transistors |
|
Manufactor |
Original |
|
DC |
new |
Actual image of the product
|
TYPE |
DESCRIPTION |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays |
|
Manufacturer |
Vishay Siliconix |
|
Series |
TrenchFET® |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Active |
|
Technology |
MOSFET (Metal Oxide) |
|
Configuration |
2 N-Channel (Dual) |
|
FET Feature |
Logic Level Gate |
|
Drain to Source Voltage (Vdss) |
30V |
|
Current - Continuous Drain (Id) @ 25°C |
8.5A |
|
Rds On (Max) @ Id, Vgs |
19.5mOhm @ 8A, 10V |
|
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
|
Input Capacitance (Ciss) (Max) @ Vds |
660pF @ 15V |
|
Power - Max |
3.1W |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
|
Supplier Device Package |
8-SOIC |
|
Base Product Number |
SI4214 |
Product datasheet
For more information, please download
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SI4214DDY-T1-GE3 Transistors MOSFET 2N-CH 30V 8.5A 8SOIC Mosfet Array 30V 8.5A 3.1W Surface Mount 8-SOIC
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