Hot sale Original SQJ415EP-T1_GE3 Transistors MOSFET P-Channel 40 V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

Manufacturer

VISHAY

Manufacturer Product Number

SQJ415EP-T1_GE3

Description

Original SQJ415EP-T1_GE3 Transistors MOSFET P-Channel 40 V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

Package Condition

Tape & Reel (TR) Cut Tape (CT)

Product Details
Reviews

Product Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6000pF @ 25V maximal input capacitance.To operate this transistor, you will need a 40V drain to source voltage (Vdss).

Product Features

a 40V drain to source voltage (Vdss)

Product Applications

There are a lot of Vishay Siliconix
SQJ415EP-T1_GE3 applications of single MOSFETs transistors.

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

· Telecom 1 Sever Power Supplies

· Industrial Power Supplies

Product Description

Type	Description
ANSC PART#	ANSC - SQJ415EP-T1_GE3
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Base Product Number	SQJ415

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