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Hot sale original electronics Transistors FDS6912A MOSFET 2N-CH 30V 6A 8SOIC Mosfet Array 30V 6A 900mW Surface Mount 8-SOIC
Manufacturer
Manufacturer Product Number
FDS6912A
Description
Transistors FDS6912A MOSFET 2N-CH 30V 6A 8SOIC Mosfet Array 30V 6A 900mW Surface Mount 8-SOIC
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Product Details
FDS6912A Description
These N-Channel Logic Level MOSFETs are made utilizing the cutting-edge POWERTRENCH technology from Onsemi, which has been carefully designed to reduce the on-state resistance while maintaining exceptional switching performance. These devices work well in battery- and low-voltage applications that call for quick switching and little in-line power loss.
FDS6912A Features
? Switching With Speed
? Minimal Gate Fee
? Ultra-Low RDS High Performance Trench Technology (ON)
? Ability to Handle High Power and Current
? This device is halogen- and pb-free.
FDS6912A Applications
Switching applications
Product Description
|
TYPE |
DESCRIPTION |
|---|---|
|
ANSC PART# |
ANSC - FDS6912A |
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays |
|
Manufacturer |
onsemi |
|
Series |
PowerTrench® |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Active |
|
Technology |
MOSFET (Metal Oxide) |
|
Configuration |
2 N-Channel (Dual) |
|
FET Feature |
Logic Level Gate |
|
Drain to Source Voltage (Vdss) |
30V |
|
Current - Continuous Drain (Id) @ 25°C |
6A |
|
Rds On (Max) @ Id, Vgs |
28mOhm @ 6A, 10V |
|
Vgs(th) (Max) @ Id |
3V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
8.1nC @ 5V |
|
Input Capacitance (Ciss) (Max) @ Vds |
575pF @ 15V |
|
Power - Max |
900mW |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
|
Supplier Device Package |
8-SOIC |
|
Base Product Number |
FDS69 |
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Product datasheet
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Transistors FDS6912A MOSFET 2N-CH 30V 6A 8SOIC Mosfet Array 30V 6A 900mW Surface Mount 8-SOIC
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