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Original spot NCE30H11K TO-252 high-voltage N-channel IGBT MOS tube
Manufacturer
Manufacturer Product Number
NCE30H11K
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCE30H11K |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO252 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 30 |
| ID(A) | 110 |
| VTH(V) | 1.6 |
| RDS(ON)@10VTyp(mΩ) | 2.6 |
| RDS(ON)@4.5VTyp(mΩ) | 3.6 |
| QG(nC) | 70 |
| PD(W) | 70 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE30H11K.pdf
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