Hot sale original electronics onsemi / Fairchild MOSFET SSOT-6 P-CH FET 60V 105.0 MOHM SSOT6 ROHS

Manufacturer

Manufacturer Product Number

FDC5614P

Description

onsemi FDC5614P MOSFET P-CH 60V 3A SUPERSOT6 P-Channel 60 V 3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

Package Condition

Tape & Reel (TR)

Product Details
Reviews

Product Details

Description

The FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or it can minimize the undesirable voltage spikes. This product is general usage and suitable for many different applications.

Features

• –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) = 0.135 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)

Application

• DC-DC converters
• Load switch
• Power management

Product Description

ANSC PART#	ANSC- FDC5614P
Part#	FDC5614P
Type：	Electronic components
Manufactor	onsemi / Fairchild
DC	new

Actual image of the product

Product Attributes

TYPE	DESCRIPTION
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	PowerTrench®
Packaging	Tape & Reel (TR) Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	105mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	759 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SuperSOT™-6
Package / Case	SOT-23-6 Thin, TSOT-23-6
Base Product Number	FDC5614