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Hot sale Original SI4948BEY-T1-E3 Transistor MOSFET 2P-CH 60V 2.4A 8SOIC Mosfet Array 60V 2.4A 1.4W Surface Mount

Manufacturer
Manufacturer Product Number
SI4948BEY-T1-E3
Description

Original SI4948BEY-T1-E3 Transistor MOSFET 2P-CH 60V 2.4A 8SOIC Mosfet Array 60V 2.4A 1.4W Surface Mount 8-SOIC

Package Condition
Tape & Reel (TR)Cut Tape (CT)

Brief Description: The SI4948BEY-T1-E3 is a dual P-channel metal-oxide semiconductor field-effect transistor (MOSFET) array from Vishay Siliconix. It is designed for surface mount applications and features logic-level gate technology.

Product Features   

Dual P-channel MOSFET array

Logic-level gate technology

Metal-oxide semiconductor (MOS) technology

Enhancement mode operation

Operating temperature range: -55°C to 175°C

Peak reflow temperature: 260°C

RoHS3 compliant

Lead-free and moisture sensitivity level (MSL) 1 (unlimited)

8-pin, 8-lead SOIC package

Tape and reel packaging

Nominal Vgs: -3V

Rds(on) max: 120mΩ @ 3.1A, 10V

Gate charge (Qg) max: 22nC @ 10V

Fall time: 15ns

Rise time: 15ns

Turn-on delay time: 10ns

Turn-off delay time: 50ns

Application Grade:

The SI4948BEY-T1-E3 is designed for high-frequency and high-power applications,

such as: 

Power switching

Motor control

Power supplies

Automotive electronics

Industrial automation

Product Applications

Power switching in automotive and industrial applications

Motor control in robotics and automation

Power supplies in data centers and telecommunications

High-frequency switching in RF and microwave applications

High-power applications in industrial automation and power generation

Product Description

Type

Description

ANSC PART#

ANSC - SI4948BEY-T1-E3

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

Technology

MOSFET (Metal Oxide)

Configuration

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.4A

Rds On (Max) @ Id, Vgs

120mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

Base Product Number

SI4948

Actual image of the product 

37489.jpg

Product datasheet   

For more information, please download

   

SI4948BEY-T1-E3-2.png

SI4948BEY-T1-E3-3.png

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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Hot sale Original SI4948BEY-T1-E3 Transistor MOSFET 2P-CH 60V 2.4A 8SOIC Mosfet Array 60V 2.4A 1.4W Surface Mount

Original SI4948BEY-T1-E3 Transistor MOSFET 2P-CH 60V 2.4A 8SOIC Mosfet Array 60V 2.4A 1.4W Surface Mount 8-SOIC

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