Free hotline:
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
NCE80TD65BT TO-247 High Voltage N-Channel IGBT Field Effect Transistor
Manufacturer
Manufacturer Product Number
NCE80TD65BT
Description
High Voltage N-Channel IGBT Field Effect Transistor
Package Condition
TUBE
| Part# | NCE80TD65BT |
| Type： | High Voltage N-Channel IGBT Field Effect Transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-247 |
| Supplier Device Packaging | TUBE |
| V(BR)CES (V) | 650 |
| IC(A)100℃ | 80 |
| PD(W)25℃ | 416 |
| VGE(V) | ±30 |
| VTH(V)Typ | 5 |
| VCE(sat)(V)@VGE=15V, 25℃Typ | 1.7 |
| VCE(sat)(V)@VGE=15V, 25℃Max | 1.9 |
| SwitchingFrequency | 0~60KHz |
| Tsc(us) | 5 |
Product Data Book：https://allnewsemi.shop/img/cms/NCE80TD65BT.pdf
.jpg)
.png)
Other Products In The same category:
High Voltage N-Channel IGBT Field Effect Transistor
50000In stock:
Can ship immediately