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Hot sale Original NDT452AP Transistor MOSFET (Metal Oxide) P-CH 30V 5A P-Channel 30 V 5A (Ta) 3W (Ta) Surface Mount SOT-223-4
Original NDT452AP Transistor MOSFET (Metal Oxide) P-CH 30V 5A P-Channel 30 V 5A (Ta) 3W (Ta) Surface Mount SOT-223-4
Product Description
The NDT452AP is a P-channel logic level enhancement mode Field-Effect Transistor using high cell density and DMOS technology. This very high-density process has been specially tailored to minimize on-state resistance and provide superior switching performance. The onsemi NDT452AP is particularly suited for low voltage applications such as notebook computer power management and DC motor control.
Product Features
-RDS(ON) = 0.065 Ω @ VGS = -10V
-RDS(ON) = 0.1 Ω @ VGS = -4.5V
High-density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package
Gate Source Voltage: +20v
Operating and Storage Temperature Range: -65 to 150°C
Product Applications
Notebook computer power management
DC motor control
Motor Drive & Control
Computer
Computer Peripherals
Product Description
Type |
Description |
---|---|
ANSC PART# |
ANSC - NDT452AP |
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr |
Original |
Series |
- |
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
65mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id |
2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
30 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
690 pF @ 15 V |
FET Feature |
- |
Power Dissipation (Max) |
3W (Ta) |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-223-4 |
Package / Case |
TO-261-4, TO-261AA |
Base Product Number |
NDT452 |
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Product datasheet
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