Free hotline:
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
Spot original supply hot selling NCE6602N SOT23 high-voltage N+P-channel IGBT field-effect transistor
Manufacturer
Manufacturer Product Number
NCE6602N
Description
N+P-Channel Enhancement Mode Power MOSFET
Package Condition
Tape and Reel
Part# | NCE6602N |
Type: | NCE N+P-Channel Enhancement Mode Power MOSFET |
Manufactor | NCE |
DC | NEW |
Describe | SOT23 |
Supplier Device Packaging | REEL |
Technology | Trench dual core |
Polarity | N+P |
BVDSS(V) | -30 |
ID(A) | -2.7 |
VTH(V) | -1.6 |
RDS(ON)@10VTyp(mΩ) | 69 |
RDS(ON)@4.5VTyp(mΩ) | 110 |
QG(nC) | 5.8 |
PD(W) | 1.2 |
Product Data Book:https://allnewsemi.shop/img/cms/NCE6602N.pdf
Other Products In The same category:
50000In stock:
Can ship immediately