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Hot selling NCE30P30G DFN5X6-8L high-voltage P-channel IGBT field-effect transistor, supplied in original stock
Manufacturer
Manufacturer Product Number
NCE30P30G
Description
high-voltage P-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCE30P30G |
| Type： | High-voltage P-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | DFN5X6-8L |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -30 |
| ID(A) | -30 |
| VTH(V) | -1.6 |
| RDS(ON)@10VTyp(mΩ) | 7.4 |
| RDS(ON)@4.5VTyp(mΩ) | 10.6 |
| QG(nC) | 81 |
| PD(W) | 45 |
Trench dual core：https://allnewsemi.shop/img/cms/NCE30P30G.pdf
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high-voltage P-channel IGBT field-effect transistor
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