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Hot sale Original SI9945BDY-T1-GE3 Transistor MOSFET 2N-CH 60V 5.3A Mosfet Array 60V 5.3A 3.1W Surface Mount 8-SOIC
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BOM allocation service spot supply of NCE55P15K TO252 chip high-voltage P-channel IGBT MOS transistor
Manufacturer
Manufacturer Product Number
NCE55P15K
Description
high-voltage P-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCE55P15K |
| Type： | NCE P-Channel Enhancement Mode Power MOSFET |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-252 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -55 |
| ID(A) | -15 |
| VTH(V) | -2.6 |
| RDS(ON)@10VTyp(mΩ) | 60 |
| QG(nC) | 26 |
| PD(W) | 35 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE55P15K.pdf
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high-voltage P-channel IGBT field-effect transistor
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