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Hot sale Original SI2323CDS-T1-GE3 Transistors P-Channel 20 V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Manufacturer
Manufacturer Product Number
SI2323CDS-T1-GE3
Description

Original SI2323CDS-T1-GE3 Transistors MOSFET (Metal Oxide) P-Channel 20 V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Package Condition
Tape & Reel (TR) Cut Tape (CT)

Product Overview 

The maximum input capacitance of this device is 1090pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -4.6A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.As shown in the table below, the drain current of this device is 6A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -400mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.

Product Features  

a continuous drain current (ID) of -4.6A
a drain-to-source breakdown voltage of -20V voltage
a threshold voltage of -400mV
a 20V drain to source voltage (Vdss)

Product Applications

There are a lot of Vishay Siliconix
SI2323CDS-T1-GE3 applications of single MOSFETs transistors.

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

· Telecom 1 Sever Power Supplies

· Industrial Power Supplies

· PFC stages, hard switching PWM stages and resonant switching

· PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

 

Product Description

Type

Description

ANSC PART#

ANSC - SI2323CDS-T1-GE3

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

39mOhm @ 4.6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25 nC @ 4.5 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1090 pF @ 10 V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta), 2.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

Base Product Number

SI2323

Actual image of the product 

39360.jpg

Product datasheet   

For more information, please download

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Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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Hot sale Original SI2323CDS-T1-GE3 Transistors P-Channel 20 V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Original SI2323CDS-T1-GE3 Transistors MOSFET (Metal Oxide) P-Channel 20 V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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