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Exact specifications should be obtained from the product data sheet.

You can contact me for the best price CM900HG-130X Transistor Insulated Gate Bipolar Transistor MODULE Hot sale Original

Manufacturer Product Number
CM900HG-130X
Description

CM900HG-130X Insulated Gate Bipolar Transistor

Package Condition
Original
Datasheet
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Product Description

Type#  Description
ANSC PART# ANSC - CM900HG-130X
Manufacturer /
Package Description /
Samacsys Manufacturer /
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Collector Current-Max (IC) 900 A
Collector-Emitter Voltage-Max 6500 V
Configuration COMPLEX
Fall Time-Max (tf) 1500 ns
Gate-Emitter Thr Voltage-Max 7.5 V
Gate-Emitter Voltage-Max 20 V
Number of Elements 3
Number of Terminals 9
Operating Temperature-Max 150 °C
Operating Temperature-Min -50 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 12500 W
Reference Standard IEC-60747; UL RECOGNIZED
Rise Time-Max (tr) 500 ns
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 12000 ns
Turn-off Time-Nom (toff) 6400 ns
Turn-on Time-Max (ton) 1950 ns
VCEsat-Max 3.8 V

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CM900HG-130X

Product datasheet 

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You can contact me for the best price CM900HG-130X Transistor Insulated Gate Bipolar Transistor MODULE Hot sale Original

CM900HG-130X Insulated Gate Bipolar Transistor

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