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Hot sale original PTB20111 RF Power Bipolar Transistor 1-Element Ultra High Frequency Band Silicon NPN
Manufacturer Product Number
PTB20111
Description
PTB20111 RF Power Bipolar Transistor 1-Element Ultra High Frequency Band Silicon NPN
Package Condition
Original
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Product Details
Description
The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
• 25 Volt, 860–900 MHz Characteristics
- Output Power = 85 Watts
- Collector Efficiency = 50% at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated
Product Description
| Type# | Description |
| ANSC PART# | ANSC-PTB20111 |
| Manufacturer | / |
| Package Description | FLANGE MOUNT, R-CDFM-F2 |
| Additional Feature | HIGH RELIABILITY |
| Case Connection | EMITTER |
| Collector Current-Max (IC) | 20 A |
| Collector-Emitter Voltage-Max | 25 V |
| Configuration | SINGLE |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | NPN |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
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PTB20111 RF Power Bipolar Transistor 1-Element Ultra High Frequency Band Silicon NPN
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