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Hot sale original BSC028N06NS Transistor 23A I(D) 60V 0.0028ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor
Manufacturer Product Number
BSC028N06NS
Description
BSC028N06NS Power Field-Effect Transistor 23A I(D) 60V 0.0028ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET GREEN PLASTIC
Package Condition
Original
Datasheet
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Product Details
New OptiMOS™ 40V and 60V
Shrink Your Design and Boost Efficiency
New OptiMOS™ 40V and 60V, Infineon’s latest generation of power MOSFETs, is optimized for Synchronous
Rectification in switched mode power supplies (SMPS) such as those found in servers and desktops.
In addition these devices are a perfect choice for a broad range of industrial applications including motor control,
solar micro inverter and fast switching DC/DC converter.
Features
■ Optimized for Synchronous Rectification
■ 35% lower RDS(on) than alternative devices
■ 45% improvement of FOM over similar devices
■ Integrated Schottky-like diode
■ RoHS compliant - halogen free
■ MSL1 rated
Benefits
■ Highest system efficiency
■ Less paralleling required
■ Increased power density
■ System cost reduction
■ Very low voltage overshoot
Applications
■ Synchronous Rectification
■ Solar micro inverter
■ Isolated DC/DC converters
■ Motor control for 12-48V systems
■ Or-ing switches
Product Description
| Type# | Description |
| ANSC PART# | ANSC- BSC028N06NS |
| Manufacturer | / |
| Pin Count | 8 |
| Avalanche Energy Rating (Eas) | 100 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 23 A |
| Drain-source On Resistance-Max | 0.0028 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 5 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 400 A |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
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Product datasheet
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BSC028N06NS Power Field-Effect Transistor 23A I(D) 60V 0.0028ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET GREEN PLASTIC
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