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Hot-selling and scarce AO3413 P-Channel Enhancement Mode Field Effect Transistor SOT23 spot stock

Manufacturer Product Number
AO3413
Description

AO3413 P-Channel Enhancement Mode Field Effect Transistor SOT23 spot stock

Package Condition
TaPe & Reel
Datasheet
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Product Descriptions

The AO3413 uses advanced trench technology to  provide excellent RDS(ON), low gate charge and  operation with gate voltages as low as 1.8V. This  device is suitable for use as a load switch or in PWM  applications.

Product Features

VDS (V) = -20V

ID = -3 A

RDS(ON) < 97mΩ (VGS = -4.5V)

RDS(ON) < 130mΩ (VGS = -2.5V)

RDS(ON) < 190mΩ (VGS = -1.8V)

Product Specification

Attribute Attribute value
ANSM-Part# ANSM-AO3413
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr -
Packaging Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id)@ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 97mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 10 V
Power Dissipation (Max) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case 3-SMD, SOT-23-3 Variant
Base Product Number AO34

Product Photos

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For more product information, please download the PDF

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Hot-selling and scarce AO3413 P-Channel Enhancement Mode Field Effect Transistor SOT23 spot stock

AO3413 P-Channel Enhancement Mode Field Effect Transistor SOT23 spot stock

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