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Hot sale original electronics Transistors FDS6912A MOSFET 2N-CH 30V 6A 8SOIC Mosfet Array 30V 6A 900mW Surface Mount 8-SOIC
Manufacturer Product Number
FDS6912A
Description
Transistors FDS6912A MOSFET 2N-CH 30V 6A 8SOIC Mosfet Array 30V 6A 900mW Surface Mount 8-SOIC
Package Condition
Tape & Reel (TR) Cut Tape (CT)
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Product Details
General Description
These N-Channel Logic Level MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
• 6 A, 30 V. RDS(ON) = 28 mW @ VGS = 10 V
RDS(ON) = 35 mW @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
Product Description
| Type | Description |
| ANSC PART# | ANSC - FDS6912A |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Manufacturer | Original |
| Series | PowerTrench® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Last Time Buy |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C |
6A |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 575pF @ 15V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | FDS69 |
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Transistors FDS6912A MOSFET 2N-CH 30V 6A 8SOIC Mosfet Array 30V 6A 900mW Surface Mount 8-SOIC
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