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You can contact me for the best price Original FS400R07A3E3 Transistors IGBT Insulated Gate Bipolar Transistor Hot sale Original
Manufacturer Product Number
FS400R07A3E3
Description
FS400R07A3E3 Insulated Gate Bipolar Transistor
Package Condition
Original
Datasheet
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Product Details
| Features • Electrical features - VCES = 700 V - IC nom = 400 A / ICRM = 800 A - Increased blocking voltage capability to 705 V - VCE,sat with positive temperature coefficient - Low VCE,sat - Low switching losses - Low inductive design - Tvj,op = 150°C - Short-time extended operation temperature Tvj,op = 175°C • Mechanical features - 2.5 kV AC 1 minute insulation - Al2O3 substrate with low thermal resistance - Integrated NTC temperature sensor - High mechanical robustness - RoHS compliant |
Product Description
| Type# | Description |
| ANSC PART# | ANSC -FS400R07A3E3 |
| Manufacturer | / |
| Samacsys Manufacturer | / |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) | 500 A |
| Collector-Emitter Voltage-Max | 705 V |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND NTC |
| Gate-Emitter Thr Voltage-Max | 6.5 V |
| Gate-Emitter Voltage-Max | 20 V |
| JESD-30 Code | R-XUFM-X29 |
| Number of Elements | 6 |
| Number of Terminals | 29 |
| Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -40 °C |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 1250 W |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 430 ns |
| Turn-on Time-Nom (ton) | 200 ns |
| VCEsat-Max | 1.7 V |
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FS400R07A3E3 Insulated Gate Bipolar Transistor
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