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Hot-selling and scarce FQPF4N90 900V N-Channel MOSFET TO-220F spot stock
Manufacturer Product Number
FQPF4N90
Description
FQPF4N90 900V N-Channel MOSFET TO-220F spot stock
Package Condition
Tube
Datasheet
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Product Descriptions
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supplies.
Product Features
• 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V
• Low gate charge ( typically 24 nC)
• Low Crss ( typically 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Product Specification
| Attribute | Attribute value |
| ANSM-Part# | ANSM-FQPF4N90 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | QFET® |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
| Power Dissipation (Max) | 47W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
| Package / Case | TO-220-3 Full Pack |
Product Photos
For more product information, please download the PDF
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FQPF4N90 900V N-Channel MOSFET TO-220F spot stock
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