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Hot sale Original IXFP60N25X3 Transistors MOSFET N-Channel 250 V 60A (Tc) 320W (Tc) Through Hole TO-220AB (IXFP)
Original IXFP60N25X3 Transistors MOSFET N-Channel 250 V 60A (Tc) 320W (Tc) Through Hole TO-220AB (IXFP)
Product Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3610pF @ 25V.Operating this transistor requires a 250V drain to source voltage (Vdss).
Product Features
a 250V drain to source voltage (Vdss)
Product Applications
IXFP60N25X3 applications of single MOSFETs transistors.
· LCD/LED TV
· Consumer Appliances
· Lighting
· Uninterruptible Power Supply
· AC-DC Power Supply
· Synchronous Rectification for ATX 1 Server I Telecom PSU
· Motor drives and Uninterruptible Power Supplies
· Micro Solar Inverter
· DC/DC converters
· Power Tools
Product Description
|
Type |
Description |
|---|---|
|
ANSC PART# |
ANSC - IXFP60N25X3 |
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
- |
|
Series |
HiPerFET™, Ultra X3 |
|
Packaging |
Tube |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
250 V |
|
Current - Continuous Drain (Id) @ 25°C |
60A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
23mOhm @ 30A, 10V |
|
Vgs(th) (Max) @ Id |
4.5V @ 1.5mA |
|
Gate Charge (Qg) (Max) @ Vgs |
50 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
3610 pF @ 25 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
320W (Tc) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-220AB (IXFP) |
|
Package / Case |
TO-220-3 |
|
Base Product Number |
IXFP60 |
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