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Hot sale original IRLU024N MOSFET N-CH 55V 17A I-PAK N-Channel 55 V 17A (Tc) 45W (Tc) Through Hole IPAK

Manufacturer Product Number
IRLU024N
Description

IRLU024N MOSFET N-CH 55V 17A I-PAK N-Channel 55 V 17A (Tc) 45W (Tc) Through Hole IPAK

Package Condition
Tube
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Product Details

Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Logic-Level Gate Drive
● Surface Mount (IRLR024N)
● Straight Lead (IRLU024N)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated

Product Description

Type Description
ANSC PART# ANSC - IRLU024N
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr Original
Series HEXFET®
Packaging Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C
 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 25 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package IPAK
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA

Actual image of the product 

IRLU024N

Product datasheet 

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IRLU024N​

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Hot sale original IRLU024N MOSFET N-CH 55V 17A I-PAK N-Channel 55 V 17A (Tc) 45W (Tc) Through Hole IPAK

IRLU024N MOSFET N-CH 55V 17A I-PAK N-Channel 55 V 17A (Tc) 45W (Tc) Through Hole IPAK

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