Hot sale Original JANTX2N3019S Small Signal Bipolar Transistor 1A I(C) 80V V(BR)CEO 1-Element NPN Silicon TO-39 HERMETIC

Product Details

Brief Description: The JANTX2N3019S is a military-grade, NPN bipolar junction transistor (BJT).

 It is designed for switching applications and features a TO-205AD, TO-39-3 metal can package.

Features:

• Collector Base Voltage (VCBO): 140V

• Collector-Emitter Breakdown Voltage: 80V

• Collector Emitter Voltage (VCEO): 80V

• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V

• Max Collector Current: 1A

• Max Power Dissipation: 800mW

• Operating Temperature: -65°C to 200°C (TJ)

• Package / Case: TO-205AD, TO-39-3 Metal Can

• Polarity/Channel Type: NPN

• Transistor Application: Switching

• Transistor Element Material: Silicon

• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA

Application Grade: Military-grade, MIL-PRF-19500/391

Applications: The JANTX2N3019S is suitable for a wide range of switching applications, including:

• Military and aerospace systems

• Industrial control systems

• Automotive systems

• Medical devices

• Power supplies

This transistor is designed to operate in harsh environments and is suitable for applications requiring high reliability and performance. Its military-grade certification and high power dissipation make it an excellent choice for demanding applications.

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