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Hot sale original IPD60R600C6 Transistor 7.3A I(D) 600V 0.6ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor

Manufacturer Product Number
IPD60R600C6
Description

IPD60R600C6 Transistor 7.3A I(D) 600V 0.6ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET TO-252 GREEN PLASTIC PACKAGE-3

Package Condition
Original
Datasheet
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Product Details

Description

CoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use.Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Features

• Extremely low losses due to very low FOM Rdson*Qgand Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating

Applications

PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, AdapterLCD & PDP TV,
Lighting, Server, Telecom, UPS and Solar.

Product Description

Type# Description
ANSC PART# ANSC-IPD60R600C6
Manufacturer /
Part Package TO-252
Package Description GREEN, PLASTIC PACKAGE-3
Pin Count 4
Samacsys Manufacturer /
Avalanche Energy Rating (Eas) 133 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 7.3 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 63 W
Pulsed Drain Current-Max (IDM) 19 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Actual image of the product 

IPD60R600C6

Product datasheet 

For more information, please download

 

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Hot sale original IPD60R600C6 Transistor 7.3A I(D) 600V 0.6ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor

IPD60R600C6 Transistor 7.3A I(D) 600V 0.6ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET TO-252 GREEN PLASTIC PACKAGE-3

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