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Hot sale Original STW50N65DM2AG Transistors MOSFET N-CH 650V 28A TO247 N-Channel 650 V 28A (Tc) 300W (Tc) Through Hole
Manufacturer
Manufacturer Product Number
STW50N65DM2AG
Description
Original STW50N65DM2AG Transistors MOSFET N-CH 650V 28A TO247 N-Channel 650 V 28A (Tc) 300W (Tc) Through Hole TO-247-3
Package Condition
Tube
Product Description
The STW50N65DM2AG is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding automotive and industrial applications. This discrete semiconductor product is part of the MDmesh? DM2 series, which is compliant with AEC-Q101 and ROHS3 standards.
Product Features
· High voltage capability: 650V drain-to-source voltage (Vdss)
· High current handling: 28A continuous drain current (ID)
· Low on-resistance: 87mΩ (Rds On) at 19A and 10V
· Wide operating temperature range: -55°C to 150°C (TJ)
· Through-hole mounting for easy installation
· Compliant with ROHS3 and AEC-Q101 standards
· Active lifecycle status with a factory lead time of 17 weeks
Product Applications
· Automotive applications: power distribution, motor control, and battery management systems
· Industrial applications: power supplies, motor control, and automation systems
· Alternative energy applications: solar inverters, wind turbines, and energy storage systems
Product Description
|
ANSC PART# |
ANSC- STW50N65DM2AG |
|
Part# |
STW50N65DM2AG |
|
Type： |
Transistor |
|
Manufactor |
Original |
|
DC |
new |
|
Part Status |
Active |
Product images
Product Attributes
|
Type |
Description |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
STMicroelectronics |
|
Series |
MDmesh™ DM2 |
|
Packaging |
Tube |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
650 V |
|
Current - Continuous Drain (Id) @ 25°C |
28A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
87mOhm @ 19A, 10V |
|
Vgs(th) (Max) @ Id |
5V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
70 nC @ 10 V |
|
Vgs (Max) |
±25V |
|
Input Capacitance (Ciss) (Max) @ Vds |
3200 pF @ 100 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
300W (Tc) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Grade |
Automotive |
|
Qualification |
AEC-Q101 |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-247-3 |
|
Package / Case |
TO-247-3 |
|
Base Product Number |
STW50 |
Product datasheet
For more information, please download
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Original STW50N65DM2AG Transistors MOSFET N-CH 650V 28A TO247 N-Channel 650 V 28A (Tc) 300W (Tc) Through Hole TO-247-3
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