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Hot sale Original SI3459BDV-T1-BE3 Transistors P-Channel 60 V 2.2A (Ta), 2.9A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
Original SI3459BDV-T1-BE3 Transistors MOSFET (Metal Oxide) P-Channel 60 V 2.2A (Ta), 2.9A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
Product Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 350 pF @ 30 V is its maximum input capacitance.For this transistor to work, a voltage 60 V is required between drain and source (Vdss).
Product Features
a 60 V drain to source voltage (Vdss)
Product Applications
There are a lot of Vishay Siliconix
SI3459BDV-T1-BE3 applications of single MOSFETs transistors.
· AC-DC Power Supply
· Synchronous Rectification for ATX 1 Server I Telecom PSU
· Motor drives and Uninterruptible Power Supplies
· Micro Solar Inverter
· DC/DC converters
· Power Tools
· Motor Drives and Uninterruptible Power Supples
· Synchronous Rectification
· Battery Protection Circuit
· Telecom 1 Sever Power Supplies
Product Description
Type |
Description |
---|---|
ANSC PART# |
ANSC - SI3459BDV-T1-BE3 |
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr |
Vishay Siliconix |
Series |
- |
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
Part Status |
Last Time Buy |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
2.2A (Ta), 2.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
216mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
350 pF @ 30 V |
FET Feature |
- |
Power Dissipation (Max) |
2W (Ta), 3.3W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
6-TSOP |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Actual image of the product
Product datasheet
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