Free hotline:
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
Original stock NCE65TF099D TO263 high-voltage N-channel IGBT MOS transistor chip
Manufacturer
Manufacturer Product Number
NCE65TF099D
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
TUBE
| Part# | NCE65TF099D |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| Technology | SJ-Ⅲ TF |
| Polarity | N |
| BVDSS(V) | 650 |
| ID(A) | 38 |
| VTH(V) | 3.5 |
| RDS(ON)@10VTyp(mΩ) | 89 |
| PD(W) | 322 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE65TF099D.pdf
.jpg)
.png)
Other Products In The same category:
high-voltage N-channel IGBT field-effect transistor
50000In stock:
Can ship immediately