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Hot sale Original FDN5618P Transistor MOSFET P-CH 60V 1.25A SUPERSOT3 P-Channel 60 V 1.25A (Ta) 500mW (Ta) Surface Mount

Manufacturer
ON
Manufacturer Product Number
FDN5618P
Description

Original FDN5618P Transistor MOSFET P-CH 60V 1.25A SUPERSOT3 P-Channel 60 V 1.25A (Ta) 500mW (Ta) Surface Mount SOT-23-3

Package Condition
Tape & Reel (TR) Cut Tape (CT)

Product Description

The FDN5618P is a P-channel enhancement mode power MOSFET from ON Semiconductor, designed for high-frequency switching applications. This surface-mount device features a compact TO-236-3 package and is suitable for use in a wide range of electronic systems.

Product Features  

· High current rating of 1.25A continuous drain current

· High voltage rating of 60V drain-to-source breakdown voltage

· Low Rds(on) of 170mΩ at 1.25A and 10V

· Fast switching times, with a fall time of 8ns and rise time of 8ns

· Operating temperature range of -55°C to 150°C

· Lead-free and RoHS3 compliant

Product Applications

· Primary applications include switching power supplies, motor control, and audio amplifiers

· Secondary applications include LED drivers, DC-DC converters, and power management systems

Embedded Modules:

· PowerTrench series of power MOSFETs

· High-frequency switching modules

Product Description

Type Description
ANSC PART# ANSC - FDN5618P
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr ON
Series PowerTrench®
Packaging Tape & Reel (TR)
Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 30 V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature  -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number FDN5618

Actual image of the product 

36788.jpg

Product datasheet   

For more information, please download

FDN5618P-2.jpg

FDN5618P-3.jpg

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Standard packaging

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Hot sale Original FDN5618P Transistor MOSFET P-CH 60V 1.25A SUPERSOT3 P-Channel 60 V 1.25A (Ta) 500mW (Ta) Surface Mount

Original FDN5618P Transistor MOSFET P-CH 60V 1.25A SUPERSOT3 P-Channel 60 V 1.25A (Ta) 500mW (Ta) Surface Mount SOT-23-3

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