Free hotline:
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
Hot selling One stop electronic component supply IPW60R041C6 N-Channel 600 V 77.5A (Tc) 481W (Tc) Through Hole PG-TO247-3-1
Manufacturer
Manufacturer Product Number
IPW60R041C6
Description
Trans MOSFET N-CH 650V 77.5A 3-Pin(3+Tab) TO-247 Tube
Package Condition
TUBE
Datasheet
Product Descriptions
CoolMOSTm is a revolutionary technology for high voltage power MOSFETsdesigned according to the superjunction (SJ) principle and pioneered by lnfineonTechnologies. CoolMOSTM C6 series combines the experience of the leading SJMOSFET supplier with high class innovation. The offered devices provide albenefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremelylow switching and conduction losses make switching applications even moreefficient, more compact, lighter, and cooler.
Product Features
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
JEDEC 1) qualified, Pb-free plating, Halogen free
Product Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages fore.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gateor separate totem poles is generally recommended.
Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-IPW60R041C6 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| Product Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 77.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 44.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 2.96mA |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6530 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 481W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-1 |
| Package / Case | TO-247-3 |
| Base Product Number | IPW60R041 |
Actual product photos
Product Data Book：
For more product information, please download the PDF
Payment&Transportatio
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
Other Products In The same category:
Trans MOSFET N-CH 650V 77.5A 3-Pin(3+Tab) TO-247 Tube
10000In stock:
Can ship immediately