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Hot sale Original PMBTA06,235 Transistor TRANS Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 250 mW Surface Mount TO-236AB
Original PMBTA06,235 Transistor TRANS Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 250 mW Surface Mount TO-236AB
Product Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 500mA volts.
Product Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
Product Applications
There are a lot of Nexperia USA Inc.
PMBTA06,235 applications of single BJT transistors.
· Inverter
· Interface
· Driver
· Muting
Product Description
Type |
Description |
---|---|
ANSC PART# |
ANSC - PMBTA06,235 |
Category |
Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors |
Mfr |
Nexperia USA Inc. |
Series |
- |
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
Part Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
500 mA |
Voltage - Collector Emitter Breakdown (Max) |
80 V |
Vce Saturation (Max) @ Ib, Ic |
250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) |
50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 100mA, 1V |
Power - Max |
250 mW |
Frequency - Transition |
100MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
TO-236AB |
Base Product Number |
PMBTA06 |
Actual image of the product
Product datasheet
For more information, please download
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