Hot sale Original IXTY02N120P Power Field-Effect Transistor 0.2A I(D) 1200V 0.075ohm 1-Element N-Channel Silicon Metal-oxide

Product Overview 

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 40 mJ (Eas).Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 104pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.In this device, the drain-source breakdown voltage is 1.2kV and VGS=1.2kV, so the drain-source breakdown voltage is 1.2kV in this case.A device can conduct a maximum continuous current of [0.2A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 0.6A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 1200V drain to source voltage (Vdss).

Product Features  

the avalanche energy rating (Eas) is 40 mJ
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 1.2kV voltage
based on its rated peak drain current 0.6A.
a 1200V drain to source voltage (Vdss)

Product Applications

There are a lot of IXYS
IXTY02N120P applications of single MOSFETs transistors.

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

· Telecom 1 Sever Power Supplies

· Industrial Power Supplies

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