Hot sale Original FQD3N60CTM-WS Transistor MOSFET N-CH 600V 2.4A DPAK N-Channel 600 V 2.4A (Tc) 50W (Tc) Surface Mount TO-252AA

ANSC PART#

ANSC - FQD3N60CTM-WS

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

-

Series

QFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.4Ohm @ 1.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

565 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Base Product Number

FQD3N60